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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
March 2006
RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Features
Single positive-supply operation with low power and shutdown modes 39% CDMA efficiency at +28dBm average output power 53% AMPS mode efficiency at +31dBm output power Lead-free RoHS compliant 4 x 4 x 1.5mm leadless Internally matched to 50 and DC blocked RF input/output Meets CDMA2000-1XRTT performance requirements
General Description
The RMPA0959 power amplifier module (PAM) is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
PA MODULE
Vcc1 (5) COLLECTOR BIAS 1 GND (3, 7, 9,10,11)
INTERSTAGE MATCH INPUT MATCHING NETWORK OUTPUT MATCHING NETWORK
RF IN (4)
INPUT STAGE INPUT STAGE BIAS
MMIC
OUTPUT STAGE OUTPUT STAGE BIAS
RF OUT (8)
VCC=3.4V (nom) VREF=2.85V (nom) 824-849 MHz 50 I/O
Vref (1)
BIAS CONTROL
COLLECTOR BIAS 2
Vcc2 (6)
Vmode (2)
(c)2006 Fairchild Semiconductor Corporation
1
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RMPA0959 Rev. F
RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Absolute Ratings1
Symbol
Vcc1, Vcc2 Vref Vmode Pin Tstg Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Parameter
Ratings
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Notes: No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol Parameter Min Typ Max Units
824 25 26 28 16 39 8.5 20 475 130 -55 -57 -60 -70 26 27.5 53 2.0:1 4 -134 2.5:1 dB dBm/ Hz dBc dBc C mA mA uA Vmode 2.0V Po +28 dBm No applied RF signal. Po +28 dBm; 869 to 894 MHz Po +28 dBm Load VSWR 5.0:1 No permanent damage. 26.5 29 25 849 MHz dB dB dB dBm dBm % % % mA mA dBc dBc dBc dBc Po = 0 dBm Po = +28 dBm; Vmode = 0V Po = +16 dBm; Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode 2.0V, Vcc = 1.5 V Po = +28 dBm, Vmode = 0V Po = +16 dBm, Vmode = 2.0V IS-95 A/B Modulation Po = +28 dBm; Vmode = 0V Po = +16 dBm; Vmode 2.0V Po = +28 dBm; Vmode = 0V Po = +16 dBm; Vmode 2.0V Po = +31 dBm Po = +31 dBm
Comments
f Operating Frequency CDMA Operation SSg Small-Signal Gain Gp Power Gain Po PAEd Linear Output Power PAE (digital) @ +28 dBm PAE (digital) @ +16 dBm PAEd (digital) @ +16 dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio 885 KHz Offset 1.98 MHz Offset
Itot
ACPR1 ACPR2
AMPS Operation Gp Power Gain PAEa Power-Added Efficiency (analog) General Characteristics VSWR Input Impedance NF Noise Figure Rx No Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2,3 Ruggedness w/ Load Mismatch3 Tc Case Operating Temperature DC Characteristics Iccq Quiescent Current Iref Reference Current Icc(off) Shutdown Leakage Current 2fo-5fo S
%
-30 62 5 <1
-30 -60 10:1 85
8 5
Notes: 1. All parameters met at Tc = +25C, Vcc = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design.
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Vmode Pout Tc Supply Voltage Reference Voltage Bias Control Voltage Linear Output Power (operating) (shutdown) (low-power) (high-power) (high-power) (low-power) -30
Parameter
Operating Frequency
Min
824 3.0 2.7 0 1.8 0
Typical
3.4 2.85 2.0
Max
849 4.2 3.1 0.5 3.0 0.5 +28 +16 +85
Units
MHz V V V V V dBm dBm C
Case Operating Temperature
3 RMPA0959 Rev. F
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Typical Characteristics
30.0 29.5 29.0 RMPA0959 Cellular 4x4 PAM, Pout = 28dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 0V, Tc = 25C 42.0 41.0 40.0 RMPA0959 Cellular 4x4 PAM, Pout = 28dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 0V, Tc = 25C
Gain (dB)
28.5 28.0 27.5 27.0 26.5 26.0 824 836.5 Frequency (MHz) 849
PAE (%)
39.0 38.0 37.0 36.0 35.0 34.0 824 836.5 Frequency (MHz) 849
-48.0
RMPA0959 Cellular 4x4 PAM, Pout = 28dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 0V, Tc = 25C
-54
RMPA0959 Cellular 4x4 PAM, Pout = 28dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 0V, Tc = 25C
-50.0
-56
ACPR1 (dBc)
-52.0
ACPR2 (dBc)
824 836.5 Frequency (MHz) 849
-58 -60 -62 -64 824 836.5 Frequency (MHz) 849
-54.0 -56.0 -58.0
RMPA0959 Cellular 4x4 PAM, Pout = 31dBm, AMPS Mode Vcc = 3.4, Vref = 2.85, Vmode = 0V, Tc = 25C 56.0 55.0 54.0 53.0
30.0 29.5 29.0
RMPA0959 Cellular 4x4 PAM, Pout = 31dBm, AMPS Mode Vcc = 3.4, Vref = 2.85, Vmode = 0V, Tc = 25C
Gain (dB)
824 836.5 Frequency (MHz) 849
PAE (%)
52.0 51.0 50.0 49.0 48.0 47.0 46.0
28.5 28.0 27.5 27.0 26.5 26.0 824 836.5 Frequency (MHz) 849
11.0 10.0
RMPA0959 Cellular 4x4 PAM, Pout = 16dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 2.0V, Tc = 25C
27.0 26.5 26.0
RMPA0959 Cellular 4x4 PAM, Pout = 16dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 2.0V, Tc = 25C
Gain (dB)
824 836.5 Frequency (MHz) 849
PAE (%)
9.0
25.5 25.0 24.5 24.0 23.5
8.0 7.0 6.0
23.0 824 836.5 Frequency (MHz) 849
RMPA0959 Cellular 4x4 PAM, Pout = 16dBm, IS95 mod. Vcc = 3.4, Vref = 2.85, Vmode = 2.0V, Tc = 25C -55.0
-57.0
ACPR1 (dBc)
-59.0 -61.0 -63.0
-65.0 824 836.5 Frequency (MHz) 849
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Typical Characteristics (Continued)
RMPA0959 Cellular 4x4 PAM, Pout = 16dBm, IS95 mod. Vcc = 3.4V, Vref = 2.85V, Vmode = 2.0V, Tc = 25C, -70.0 -72.0 ACPR2 (dBc) Icc total (mA) -74.0 500 450 400 350 300 250 200 150 100 50 -80.0 824 836.5 Frequency (MHz) 849 0 0.0 4.0 8.0 12.0 16.0 Pout (dBm) 20.0 24.0 28.0 Vmode = 0V Vmode = 2.0V RMPA0959 Cellular 4x4 PAM Frequency = 836.5MHz, Vcc = 3.4V, Vref = 2.85V
-76.0 -78.0
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. The following charts show measured performance of the PA module in low-power mode (Vmode = +2.0V) at +16dBm output power and over a range of supply voltages from 3.4V nominal down to 1.5V over temp. Power-added efficiency is more than doubled from 9.5 percent to nearly 20 percent (Vcc = 1.5V) while maintaining a typical ACPR1 of -52dBc and ACPR2 of less than -61dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. The PA module can be biased at a supply voltage of as low as 0.7V with an efficiency as high as 1012 percent at +8dBm output power. Excellent signal linearity is still maintained even under this low supply voltage condition.
RMPA0959 Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
24.0 22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
RMPA0959 Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
30.0 28.0 Gain (dB) 26.0 24.0 22.0 20.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
PAE (%)
RMPA0959 Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
-40.0 -42.0 -44.0 -46.0 -48.0 -50.0 -52.0 -54.0 -56.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
RMPA0959 Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
-50.0 -55.0 ACPR2 (dBc) -60.0 -65.0 -70.0 -75.0 -80.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
ACPR1 (dBc)
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Efficiency Improvement Applications (continued)
RMPA0959 Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
30.0 28.0 Gain (dB) 26.0 24.0 22.0 20.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
PAE (%) 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
RMPA0959 Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
RMPA0959 Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
-40.0 -42.0 -44.0 -46.0 -48.0 -50.0 -52.0 -54.0 -56.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V) -52.0 -57.0 ACPR2 (dBc) -62.0 -67.0 -72.0 -77.0 -82.0
RMPA0959 Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
ACPR1 (dBc)
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
RMPA0959 Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
30.0 28.0 Gain (dB) 26.0 24.0 22.0 20.0
RMPA0959 Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
PAE (%)
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
RMPA0959 Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
-40.0 -45.0 ACPR1 (dBc) -50.0 -55.0 -60.0 -65.0 -70.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
ACPR2 (dBc) -60.0 -65.0 -70.0 -75.0 -80.0 -85.0 -90.0
RMPA0959 Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Vcc (V)
6 RMPA0959 Rev. F
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Efficiency Improvement Applications (continued)
RMPA0959 Cellular 4x4 PAM Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
30.0
30.0
RMPA0959 Cellular 4x4 PAM Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
25.0
28.0
20.0
15.0
Gain (dB )
824 836.5 849
26.0
P A E (%)
24.0
10.0
22.0
5.0
0.0 Frequency (MHz)
20.0 824 8 36.5 8 49
Frequency (MHz)
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
RMPA0959 Cellular 4x4 PAM Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
-40.0 -42.0 -44.0 -46.0
-54.0 -56.0 -58.0 -60.0
RMPA0959 Cellular 4x4 PAM Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
A C P R 1 (dB c)
-48.0 -50.0 -52.0 -54.0 -56.0 -58.0 -60.0 824 836.5 849
A C P R 2 (dB c)
-62.0 -64.0 -66.0 -68.0 -70.0 -72.0 -74.0 824 836.5 849
Frequency (MHz)
Frequency (MHz)
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
7 RMPA0959 Rev. F
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Signal Descriptions
Pin #
1 2 3 4 5 6 7 8 9 10 11
Symbol
Vref Vmode GND RF In Vcc1 Vcc2 GND RF Out GND GND GND Supply Voltage to Input Stage RF Input Signal Ground High-Power/Low-Power Mode Control Reference Voltage Supply Voltage to Output Stage Ground RF Output Signal Ground Ground Paddle Ground
Description
Evaluation Board Layout
1 4 5 3 7
2
5 6
8 6
Materials and DC Turn-On Sequence
Qty.
1 2 5 Ref 2 2 2 1 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 10
Part Number
G507548-1 V2 #142-0701-841 #234D-5211TN G57583 GRM39X7R102K50V ECJ-1VB1H1D2K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VBC104K GRM39X7R331K50V SN83 SN86
Decription
PC, BOARD SMA Connector Terminals Assembly, RMPA0959 1000pF Capacitor (D603) 1000pF Capacitor (D603) 3.3 F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) 330pF Capacitor (0603) Solder Paste Solder Paste Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Murata Indium Corp. Indium Corp.
Vendor
DC Turn on Sequence:
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm)
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Evaluation Board Schematic
0.1 F 1000 pF Vref
1 2 8
3,7,9,10
Vmode SMA1 RF IN Vcc1 3.3 F 50 ohm TRL
50 ohm TRL
4 5
0959 YWWXX
6 11
SMA2 RF OUT Vcc2
1000 pF
(package base)
330 pF
3.3 F
9 RMPA0959 Rev. F
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Package Outline
I/O 1 INDICATOR TOP VIEW 1 2 10 9
(4.00mm +.100 ) SQUARE -.050
3 4 5
0959 YWWXX
8 7 6
YW 0 9 5 9 WX X
1.60mm MAX.
FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heatsealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature. * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. - Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220C, with a maximum limit of 225C. - Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. * Reflow Profile - Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 12C/sec. - Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150C.
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
240 220 200 183C 180 160 140 DEG (C) 120 100 80 60 40 20 0 0 60 120 TIME (SEC) 180 1C/SEC SOAK AT 150C FOR 60 SEC
10 SEC
45 SEC (MAX) ABOVE 183C
1C/SEC
240
300
Figure 1. Recommended Solder Reflow Profile
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RMPA0959 CDMA and CDMA2000-1X PowerEdgeTM Power Amplifier Module
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDiS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18
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